Infineon HEXFET Type N-Channel MOSFET, 210 A, 75 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 913-3960
- Mfr. Part No.:
- IRFB3077PBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD3,945.00
(exc. GST)
TWD4,142.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 250 unit(s) ready to ship from another location
- Plus 1,000 unit(s) shipping from July 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD78.90 | TWD3,945.00 |
| 100 - 150 | TWD77.20 | TWD3,860.00 |
| 200 + | TWD71.70 | TWD3,585.00 |
*price indicative
- RS Stock No.:
- 913-3960
- Mfr. Part No.:
- IRFB3077PBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 370W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 370W | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 75V Maximum Drain Source Voltage - IRFB3077PBF
This MOSFET is a high-performance power electronics component suitable for various demanding applications. Designed using Si MOSFET technology, it features a TO-220AB MOSFET package that enables effective thermal management. With a maximum continuous drain current of 210A and a maximum drain-source voltage of 75V, it excels in high-current applications while ensuring reliable performance under tough conditions.
Features & Benefits
• Achieves low RDS(on) of 3.3mΩ for efficient operation
• Designed for enhancement mode, supporting robust applications
• High maximum power dissipation of 370W optimises device longevity
• Improved avalanche and dynamic dV/dt ruggedness ensures safety
• Fully characterised capacitance, enhancing switching performance
• Suitable for high-speed power switching with excellent thermal stability
Applications
• Utilised in high-efficiency synchronous rectification systems
• Ideal for uninterruptible power supply configurations
• Effective in hard switched and high-frequency circuits
• Facilitates efficient power management in industrial automation systems
• Supports various power supply designs in electrical and mechanical
What operating temperature range can this component endure?
It operates reliably within a temperature range of -55°C to +175°C, making it suitable for a wide variety of environments.
How does the low RDS(on) benefit the application?
The low RDS(on) significantly reduces power loss during operation, which enhances energy efficiency and thermal performance in applications requiring high current flow.
What are the advantages of the TO-220AB package format?
This package format ensures better heat dissipation and easier installation, particularly in through-hole mounting scenarios, promoting robust circuit designs.
What type of gate threshold voltage does it require?
The component supports a gate threshold voltage ranging between 2V and 4V, allowing for compatibility with various control circuits.
Related links
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