Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

RS Stock No.:: 913-3932
Mfr. Part No.:: IRFB4227PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

The image is for reference only, please refer to product details and specifications

Bulk discount available

View bulk pricing options

Subtotal (1 tube of 50 units)*

TWD3,530.00

(exc. GST)

TWD3,706.50

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Tube*
50 - 50	TWD70.60	TWD3,530.00
100 - 150	TWD69.10	TWD3,455.00
200 +	TWD64.20	TWD3,210.00

*price indicative

RS Stock No.:: 913-3932
Mfr. Part No.:: IRFB4227PBF
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	65A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	70nC
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	-30V, +30V
	Maximum Power Dissipation Pd	330W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.82mm
	Length	10.66mm
	Standards/Approvals	RoHS
	Height	9.02mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 65A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 70nC
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs -30V, +30V
	Maximum Power Dissipation Pd 330W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.82mm
	Length 10.66mm
	Standards/Approvals RoHS
	Height 9.02mm
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 200V Maximum Drain-Source Voltage, 65A Maximum Continuous Drain Current - IRFB4227PBF

This MOSFET is a high-current N-channel enhancement device designed for power switching and control in demanding electronic systems. It operates across a wide temperature range and is supplied in a through-hole TO-220 package suitable for conventional board mounting. The device meets RoHS requirements and is intended for applications requiring substantial continuous current handling and thermal resilience.

Features and Benefits:

• 24mΩ low Rds(on) gives reduced conduction losses
• 330W power dissipation enables sustained thermal load handling
• 70nC gate charge allows Faster switching transitions
• 30V gate tolerance supports robust gate-drive margins
• -40°C to 175°C rating sustains wide operating environments

Applications

• Suitable for high-current DC motor controllers
• Ideal for switch-mode power supplies and converters
• Used with battery management and power distribution systems
• Can be used for industrial inverter stages
• Suitable for general-purpose power switching on through-hole boards

What is the device’s package and mounting style?

It is supplied in a TO-220 package and intended for through-hole mounting.

What operating temperature extremes can it withstand?

It is rated to operate from -40°C up to 175°C.

How does the device address regulatory material restrictions?

It conforms to RoHS standards limiting hazardous substances.

What is the channel type and conduction mode?

It is an N-channel device operating in enhancement mode.

What are the gate and drain voltage limits?

The gate is rated to ±30V and the drain-to-source maximum is 200V.