N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-247 Infineon IPW60R190C6FKSA1

RS Stock No.:: 911-5029
Mfr. Part No.:: IPW60R190C6FKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-247 Infineon IPW60R190C6FKSA1

Temporarily out of stock - back order for despatch 06/05/2025, delivery within 6 working days

Added

Price (VAT excluded) Each (In a Tube of 30)

TWD102.80

(exc. GST)

TWD107.94

(inc. GST)

Units	Per unit	Per Tube*
30 - 30	TWD102.80	TWD3,084.00
60 - 90	TWD100.50	TWD3,015.00
120 +	TWD93.40	TWD2,802.00
*price indicative

RS Stock No.:: 911-5029
Mfr. Part No.:: IPW60R190C6FKSA1
Manufacturer:: Infineon

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: DE

Product Details

Infineon CoolMOS™C6/C7 Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20.2 A
Maximum Drain Source Voltage	650 V
Series	CoolMOS C6
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	151 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	16.13mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	5.21mm
Typical Gate Charge @ Vgs	63 nC @ 10 V
Height	21.1mm
Minimum Operating Temperature	-55 °C