Infineon OptiMOS 3 N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 1000 units)*

TWD117,400.00

(exc. GST)

TWD123,270.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 4000TWD117.40TWD117,400.00
5000 +TWD115.00TWD115,000.00

*price indicative

RS Stock No.:
911-0825
Mfr. Part No.:
IPB025N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

4.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

155nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

175°C

Width

9.45mm

Length

10.31mm

Height

4.57mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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