N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

RS Stock No.:: 907-4741P
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

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Bulk discount available

Subtotal (8 tubes of 1 unit)**

TWD5,480.00

(exc. GST)

TWD5,754.00

(inc. GST)

496 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit
8 - 14	TWD664.00
15 +	TWD644.00

**price indicative

RS Stock No.:: 907-4741P
Mfr. Part No.:: SCT30N120
Manufacturer:: STMicroelectronics

SCT30N120, Silicon Carbide Power MOSFET 45A, 1200V, 90mOhm N-Channel in HiP247
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	1200 V
Package Type	HiP247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	270 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Maximum Operating Temperature	+200 °C
Transistor Material	Si
Width	5.15mm
Typical Gate Charge @ Vgs	105 nC @ 20 V
Length	15.75mm
Number of Elements per Chip	1
Height	20.15mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	3.5V

N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics