N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCT30N120
- RS Stock No.:
- 907-4741
- Mfr. Part No.:
- SCT30N120
- Manufacturer:
- STMicroelectronics
1 In stock for delivery within 6 working days
Added
Price (VAT excluded) Each
TWD780.00
(exc. GST)
TWD819.00
(inc. GST)
| Units | Per unit |
| 1 - 7 | TWD780.00 |
| 8 - 14 | TWD761.00 |
| 15 + | TWD748.00 |
- RS Stock No.:
- 907-4741
- Mfr. Part No.:
- SCT30N120
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | HiP247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 270 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +25 V |
| Width | 5.15mm |
| Typical Gate Charge @ Vgs | 105 nC @ 20 V |
| Length | 15.75mm |
| Maximum Operating Temperature | +200 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 20.15mm |
| Forward Diode Voltage | 3.5V |