Infineon OptiMOS 5 N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252 IPD053N06NATMA1
- RS Stock No.:
- 906-4491
- Mfr. Part No.:
- IPD053N06NATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD473.00
(exc. GST)
TWD496.60
(inc. GST)
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In Stock
- 4,430 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | TWD47.30 | TWD473.00 |
| 630 - 1240 | TWD46.40 | TWD464.00 |
| 1250 + | TWD45.30 | TWD453.00 |
*price indicative
- RS Stock No.:
- 906-4491
- Mfr. Part No.:
- IPD053N06NATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 45A Maximum Continuous Drain Current - IPD053N06NATMA1
This MOSFET is an N‑channel enhancement device designed for high‑current switching in surface‑mounted power assemblies. It operates across a wide ambient range for demanding thermal environments and is intended for applications where low conduction losses and rapid switching are required. The device supports standard drive voltages and provides a controlled forward conduction characteristic suitable for modern power conversion and motor‑drive topologies.
Features and Benefits:
• 8mΩ Rds(on) reduces conduction losses and improves efficiency
• 45A continuous drain current supports high‑current designs
• 27nC typical gate charge enables faster switching transitions
• 83W maximum power dissipation allows high‑power operation
• 20V gate tolerance accommodates common gate‑drive schemes
• 45A continuous drain current supports high‑current designs
• 27nC typical gate charge enables faster switching transitions
• 83W maximum power dissipation allows high‑power operation
• 20V gate tolerance accommodates common gate‑drive schemes
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for three‑phase motor inverter half‑bridges
• Used with battery management systems in high‑current paths
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for load‑switching in industrial automation units
• Ideal for three‑phase motor inverter half‑bridges
• Used with battery management systems in high‑current paths
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for load‑switching in industrial automation units
What gate‑drive considerations affect switching performance?
Driving the gate towards the 20V limit reduces on‑resistance but increases switching losses
selecting a driver that balances voltage and slew rate optimises efficiency and electromagnetic behaviour.
How should thermal conditions be managed for continuous operation?
With an 83W dissipation rating, heatsinking and PCB copper area must be sized to maintain junction temperatures within the device’s -55°C to 175°C operational range for reliable long‑term operation.
What mechanical constraints affect PCB layout for this device?
The TO‑252 surface‑mount package requires attention to pad geometry and thermal vias to transfer heat from the solderable package base into the board’s thermal planes.
How does forward voltage influence conduction calculations?
A typical forward voltage of 1.2V should be included when calculating voltage drop and power loss in conduction intervals, particularly under high‑current conditions.
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