N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
- RS Stock No.:
- 900-9964P
- Mfr. Part No.:
- CSD19534KCS
- Manufacturer:
- Texas Instruments
Bulk discount available
Subtotal (3 tubes of 5 units)**
TWD1,005.00
(exc. GST)
TWD1,055.25
(inc. GST)
30 In stock for delivery within 6 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit |
---|---|
15 - 20 | TWD65.40 |
25 + | TWD64.40 |
**price indicative
- RS Stock No.:
- 900-9964P
- Mfr. Part No.:
- CSD19534KCS
- Manufacturer:
- Texas Instruments
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | Texas Instruments | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 100 V | |
Series | NexFET | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 20 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 118 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 17.1 nC @ 0 V | |
Maximum Operating Temperature | +175 °C | |
Length | 10.67mm | |
Number of Elements per Chip | 1 | |
Width | 4.7mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.1V | |
Height | 16.51mm | |
Select all | ||
---|---|---|
Manufacturer Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Series NexFET | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 118 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 17.1 nC @ 0 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Height 16.51mm | ||