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    N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK Texas Instruments CSD19536KTTT

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    Subtotal (1 unit)**

    TWD194.00

    (exc. GST)

    TWD203.70

    (inc. GST)

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    524 In stock for delivery within 6 working days*

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    13 - 24TWD190.00
    25 +TWD187.00

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    Packaging Options:
    RS Stock No.:
    900-9857
    Mfr. Part No.:
    CSD19536KTTT
    Manufacturer:
    Texas Instruments
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    Manufacturer

    Texas Instruments

    Channel Type

    N

    Maximum Continuous Drain Current

    272 A

    Maximum Drain Source Voltage

    100 V

    Package Type

    D2PAK (TO-263)

    Series

    NexFET

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    2.8 mΩ

    Channel Mode

    Enhancement

    Maximum Power Dissipation

    375 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Number of Elements per Chip

    1

    Maximum Operating Temperature

    +175 °C

    Transistor Material

    Si

    Width

    9.65mm

    Typical Gate Charge @ Vgs

    118 nC @ 0 V

    Length

    10.67mm

    Height

    4.83mm

    Forward Diode Voltage

    1.1V

    Minimum Operating Temperature

    -55 °C