Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-262

RS Stock No.:: 892-2166
Mfr. Part No.:: IPI086N10N3GXKSA1
Manufacturer:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-262

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Subtotal (1 pack of 5 units)*

TWD470.00

(exc. GST)

TWD493.50

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

1,175 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
5 +	TWD94.00	TWD470.00

*price indicative

RS Stock No.:: 892-2166
Mfr. Part No.:: IPI086N10N3GXKSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-262
	Series	OptiMOS 3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15.4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	10.36mm
	Width	4.57mm
	Standards/Approvals	No
	Height	11.177mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-262
	Series OptiMOS 3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15.4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 10.36mm
	Width 4.57mm
	Standards/Approvals No
	Height 11.177mm
	Automotive Standard No

Infineon OptiMOS™ 3 Series MOSFET, 80A Maximum Continuous Drain Current, 125W Maximum Power Dissipation - IPI086N10N3GXKSA1

This MOSFET is designed for high-efficiency power management applications and is suitable for various sectors, including automation and electronics. With a continuous drain current of 80A and a maximum drain-source voltage of 100V, it offers a dependable and efficient solution for electronic systems.

Features & Benefits

• N-channel design optimises electrical performance

• Low RDS(on) reduces power losses

• High power dissipation capability accommodates intensive applications

• Enhanced gate threshold improves switching efficiency

• Through hole mounting allows easy integration into circuits

Applications

• Used for high-frequency switching in power supplies

• Facilitates synchronous rectification in converter circuits

• Suitable for industrial automation systems requiring efficient power control

• Applied in various electronic devices for enhanced energy efficiency

• Appropriate for automotive requiring consistent performance

What is the significance of the low RDS(on) in this device?

The low RDS(on) value minimises energy losses during switching, increasing overall system performance.

How does the MOSFET handle high temperatures?

It is designed to function at temperatures up to 175°C, ensuring consistent performance even in challenging environmental conditions.

What mounting type does this component require?

It features a through hole mounting design that facilitates straightforward integration into existing PCB layouts.

Is it suitable for use in synchronous rectification?

Yes, it is specifically designed for efficient synchronous rectification in power electronics, promoting overall energy savings.

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.