Dual N/P-Channel-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK Diodes Inc DMG4511SK4-13

RS Stock No.:: 885-5482P
Mfr. Part No.:: DMG4511SK4-13
Manufacturer:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK Diodes Inc DMG4511SK4-13

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7440 In stock for delivery within 6 working days

Price (VAT excluded) Each (Supplied on a Reel) Quantities below 150 on continuous strip

TWD20.20

(exc. GST)

TWD21.21

(inc. GST)

Units	Per unit
640 - 1240	TWD20.20
1260 +	TWD19.90

RS Stock No.:: 885-5482P
Mfr. Part No.:: DMG4511SK4-13
Manufacturer:: DiodesZetex

DMG4511SK4, Complementary Pair Enhancement Mode MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	9.3 A, 9.6 A
Maximum Drain Source Voltage	35 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	8.9 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	6.2mm
Number of Elements per Chip	2
Length	6.7mm
Transistor Material	Si
Typical Gate Charge @ Vgs	18.7 nC @ 10 V, 19.2 nC @ 10 V
Forward Diode Voltage	1.2V
Height	2.39mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 9.3 A, 9.6 A, 35 V, 3-Pin DPAK Diodes Inc DMG4511SK4-13

Dual N/P-Channel MOSFET, Diodes Inc.