N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STMicroelectronics STY145N65M5
- RS Stock No.:
- 880-5474P
- Mfr. Part No.:
- STY145N65M5
- Manufacturer:
- STMicroelectronics
Subtotal (8 tubes of 1 unit)**
TWD11,376.00
(exc. GST)
TWD11,944.80
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over TWD2,857.00 (ex VAT)
Units | Per unit |
---|---|
8 + | TWD1,384.00 |
**price indicative
- RS Stock No.:
- 880-5474P
- Mfr. Part No.:
- STY145N65M5
- Manufacturer:
- STMicroelectronics
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 138 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | Max247 | |
Series | MDmesh | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 15 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 625 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Typical Gate Charge @ Vgs | 414 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Width | 5.3mm | |
Length | 15.9mm | |
Number of Elements per Chip | 1 | |
Forward Diode Voltage | 1.5V | |
Height | 20.3mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 138 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type Max247 | ||
Series MDmesh | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 15 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 625 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Typical Gate Charge @ Vgs 414 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 5.3mm | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.5V | ||
Height 20.3mm | ||