onsemi FQD7P20TM Type P-Channel MOSFET, 5.7 A, 200 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 864-4948
- Mfr. Part No.:
- FQD7P20TM
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
TWD43,500.00
(exc. GST)
TWD45,675.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Supply shortage
- 2,500 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | TWD17.40 | TWD43,500.00 |
| 5000 + | TWD16.90 | TWD42,250.00 |
*price indicative
- RS Stock No.:
- 864-4948
- Mfr. Part No.:
- FQD7P20TM
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | FQD7P20TM | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.3mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series FQD7P20TM | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -5V | ||
Maximum Operating Temperature 150°C | ||
Height 2.3mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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