STMicroelectronics Single LdmoST Type N-Channel MOSFET, 5 A, 40 V Enhancement, 10-Pin PowerSO PD55015-E
- RS Stock No.:
- 829-0627
- Mfr. Part No.:
- PD55015-E
- Manufacturer:
- STMicroelectronics
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TWD736.00
(exc. GST)
TWD772.80
(inc. GST)
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In Stock
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Units | Per unit |
|---|---|
| 1 - 12 | TWD736.00 |
| 13 - 24 | TWD714.00 |
| 25 + | TWD692.00 |
*price indicative
- RS Stock No.:
- 829-0627
- Mfr. Part No.:
- PD55015-E
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Operating Frequency | 1 GHz | |
| Maximum Continuous Drain Current Id | 5A | |
| Output Power | 15W | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | LdmoST | |
| Package Type | PowerSO | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 65°C | |
| Maximum Operating Temperature | 165°C | |
| Transistor Configuration | Single | |
| Length | 9.6mm | |
| Height | 3.6mm | |
| Width | 9.5 mm | |
| Standards/Approvals | JEDEC Approved | |
| Automotive Standard | No | |
| Typical Power Gain | 14dB | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Operating Frequency 1 GHz | ||
Maximum Continuous Drain Current Id 5A | ||
Output Power 15W | ||
Maximum Drain Source Voltage Vds 40V | ||
Series LdmoST | ||
Package Type PowerSO | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 65°C | ||
Maximum Operating Temperature 165°C | ||
Transistor Configuration Single | ||
Length 9.6mm | ||
Height 3.6mm | ||
Width 9.5 mm | ||
Standards/Approvals JEDEC Approved | ||
Automotive Standard No | ||
Typical Power Gain 14dB | ||
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
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