Toshiba TK Type N-Channel MOSFET, 72 A, 120 V Enhancement, 3-Pin TO-220 TK72A12N1,S4X(S
- RS Stock No.:
- 827-6268
- Mfr. Part No.:
- TK72A12N1,S4X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 4 units)*
TWD353.20
(exc. GST)
TWD370.88
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | TWD88.30 | TWD353.20 |
| 40 - 76 | TWD86.00 | TWD344.00 |
| 80 - 196 | TWD83.80 | TWD335.20 |
| 200 - 996 | TWD81.80 | TWD327.20 |
| 1000 + | TWD80.00 | TWD320.00 |
*price indicative
- RS Stock No.:
- 827-6268
- Mfr. Part No.:
- TK72A12N1,S4X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Height | 15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Length 10mm | ||
Height 15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S