Toshiba TK Type N-Channel MOSFET, 62 A, 600 V Enhancement, 3-Pin TO-247 TK62N60W,S1VF(S
- RS Stock No.:
- 827-6255
- Mfr. Part No.:
- TK62N60W,S1VF(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD492.00
(exc. GST)
TWD516.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD492.00 |
| 10 - 19 | TWD480.00 |
| 20 - 29 | TWD469.00 |
| 30 - 59 | TWD456.00 |
| 60 + | TWD445.00 |
*price indicative
- RS Stock No.:
- 827-6255
- Mfr. Part No.:
- TK62N60W,S1VF(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | TK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 400W | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.94mm | |
| Height | 20.95mm | |
| Width | 5.02 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series TK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 400W | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.94mm | ||
Height 20.95mm | ||
Width 5.02 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VF(S
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 4-Pin TO-247 STW70N60DM6-4
- STMicroelectronics ST Type N-Channel MOSFET 600 V Depletion, 4-Pin TO-247