Infineon HEXFET Type N-Channel MOSFET, 72 A, 100 V Enhancement, 3-Pin TO-220 IRFI4110GPBF
- RS Stock No.:
- 827-3962
- Distrelec Article No.:
- 304-44-457
- Mfr. Part No.:
- IRFI4110GPBF
- Manufacturer:
- Infineon
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TWD184.00
(exc. GST)
TWD193.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,040 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 12 | TWD92.00 | TWD184.00 |
| 14 - 24 | TWD90.50 | TWD181.00 |
| 26 + | TWD87.50 | TWD175.00 |
*price indicative
- RS Stock No.:
- 827-3962
- Distrelec Article No.:
- 304-44-457
- Mfr. Part No.:
- IRFI4110GPBF
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 61W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 16.13mm | |
| Standards/Approvals | No | |
| Length | 10.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 61W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 16.13mm | ||
Standards/Approvals No | ||
Length 10.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon HEXFET Series MOSFET, 72A Maximum Continuous Drain Current, 61W Maximum Power Dissipation - IRFI4110GPBF
This n-channel MOSFET is designed for high-performance applications, providing efficient current handling and high voltage tolerance. It is essential in various electronic devices and ensures robust operation in challenging environments. Its performance in power switching and thermal management makes it a preferred component in the automation, electronics, and mechanical sectors.
Features & Benefits
• Continuous drain current capability of 72A
• Low Rds(on) resistance for enhanced operational efficiency
• Enhancement mode for effective performance
• Maximum drain-source voltage rating of 100V
• Excellent thermal management up to +175°C
• Improved avalanche ruggedness for added reliability
Applications
• Suitable for high-efficiency synchronous rectification
• Ideal for uninterruptible power supply systems
• Compatible with high-speed power switching
• Utilised in hard-switched and high-frequency circuits
What is the maximum continuous drain current for your application?
The continuous drain current is rated at 72A under optimal conditions, making it suitable for demanding applications.
What is the significance of the gate threshold voltage?
The gate threshold voltage ranges from 2V to 4V, enabling precise control of the switching characteristics.
How does the MOSFET manage thermal performance?
It has a maximum operating temperature rating of +175°C, which supports durability in high-temperature environments.
What advantages does low Rds(on) offer in device performance?
Low Rds(on) decreases power losses during switching, leading to improved overall efficiency.
Can this product handle high-frequency circuits?
Yes, it is specifically designed for hard-switched and high-frequency applications, ensuring consistent performance.
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220