Infineon OptiMOS 2 N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 827-0109
- Distrelec Article No.:
- 304-44-429
- Mfr. Part No.:
- BSS806NEH6327XTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 250 units)*
TWD1,500.00
(exc. GST)
TWD1,575.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- Plus 10,250 unit(s) shipping from September 21, 2026
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 500 | TWD6.00 | TWD1,500.00 |
| 750 - 1250 | TWD5.90 | TWD1,475.00 |
| 1500 + | TWD5.50 | TWD1,375.00 |
*price indicative
- RS Stock No.:
- 827-0109
- Distrelec Article No.:
- 304-44-429
- Mfr. Part No.:
- BSS806NEH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.3mm | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSS806NEH6327XTSA1
Features and Benefits:
• 20V drain-source rating enables safe low-voltage switching
• 2.3A continuous current supports moderate load currents
• 1.7nC gate charge enables quick gate-drive transitions
• 500mW power dissipation limits thermal stress in tight layouts
• Gate tolerated up to 8V for flexible drive voltages
Applications
• Ideal for DC-DC converters in compact assemblies
• Used with microcontroller outputs for low-voltage switching
• Can be used for load switching in automotive electronics
• Used for signal-level power control in embedded systems
What package and mounting style does it use?
What temperature conditions can it withstand during operation?
How many pins are available and what is the channel type?
What is the typical forward/bulk diode characteristic?
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