Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-220 IPP320N20N3GXKSA1
- RS Stock No.:
- 823-5642
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Manufacturer:
- Infineon
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TWD181.00
(exc. GST)
TWD190.04
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 20 unit(s) ready to ship from another location
- Plus 238 unit(s) shipping from June 18, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 12 | TWD90.50 | TWD181.00 |
| 14 - 24 | TWD88.50 | TWD177.00 |
| 26 + | TWD82.00 | TWD164.00 |
*price indicative
- RS Stock No.:
- 823-5642
- Mfr. Part No.:
- IPP320N20N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 32mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 32mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS™ 3 Series MOSFET, 34A Maximum Continuous Drain Current, 136W Maximum Power Dissipation - IPP320N20N3GXKSA1
This MOSFET offers high performance for various electronic applications. With continuous drain current capability of up to 34A and a drain-source voltage rating of 200V, it serves as an efficient power solution. The enhancement mode operation ensures dependable performance in circuits requiring switching and synchronous rectification.
Features & Benefits
• N-channel design for effective power conversion
• Low on-resistance reduces energy loss
• High operational temperature tolerance for extreme conditions
• Compatible with high-frequency switching applications
• Pb-free and RoHS compliant for environmentally friendly use
• Halogen-free materials enhance safety and compliance
Applications
• Used in power supplies for industrial automation
• Suitable for synchronous rectification in DC-DC converters
• Applicable in electric vehicle charging systems
• Ideal for battery management systems in consumer electronics
• Utilised in renewable energy inverters for efficient power transfer
What is the maximum temperature range for operation?
The component operates effectively between -55°C and +175°C, making it suitable for diverse environmental conditions.
Can it manage high drain currents?
Yes, it supports continuous drain currents of up to 34A, suitable for high power applications.
What advantages does the low RDS(on) feature provide?
The low on-resistance significantly lowers energy losses during operation, enhancing efficiency in high-power switching applications.
Is it suitable for automotive applications?
With its high temperature rating and low on-resistance, it is appropriate for automotive applications, providing performance under challenging conditions.
How would I ensure proper heat dissipation during installation?
To achieve effective thermal management, ensure the MOSFET is mounted on a heat sink or a PCB with sufficient copper area to aid in dissipating heat generated during operation.
Related links
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- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IPB320N20N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IPP110N20N3GXKSA1
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- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin TDSON