Infineon SIPMOS Type P-Channel MOSFET, 11.3 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 823-5560
- Distrelec Article No.:
- 304-44-485
- Mfr. Part No.:
- SPP15P10PLHXKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD419.00
(exc. GST)
TWD439.95
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 35 unit(s) shipping from October 19, 2026
- Plus 130 unit(s) shipping from October 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | TWD83.80 | TWD419.00 |
| 15 - 20 | TWD81.80 | TWD409.00 |
| 25 + | TWD80.60 | TWD403.00 |
*price indicative
- RS Stock No.:
- 823-5560
- Distrelec Article No.:
- 304-44-485
- Mfr. Part No.:
- SPP15P10PLHXKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SIPMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 128W | |
| Forward Voltage Vf | -0.96V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SIPMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 128W | ||
Forward Voltage Vf -0.96V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Height 15.95mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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