Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA

RS Stock No.:: 823-1877P
Mfr. Part No.:: ZXMHC3A01T8TA
Manufacturer:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA

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920 In stock for delivery within 6 working days

Price (VAT excluded) Each (Supplied on a Reel) Quantities below 150 on continuous strip

TWD51.60

(exc. GST)

TWD54.18

(inc. GST)

Units	Per unit
250 - 495	TWD51.60
500 +	TWD51.00

RS Stock No.:: 823-1877P
Mfr. Part No.:: ZXMHC3A01T8TA
Manufacturer:: DiodesZetex

Complementary 30v Enhancement Mode Mosfet H-Bridge Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.8 A, 3.1 A
Maximum Drain Source Voltage	30 V
Package Type	SM
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	180 mΩ, 330 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Length	6.7mm
Transistor Material	Si
Number of Elements per Chip	4
Typical Gate Charge @ Vgs	3.9 nC @ 10 V, 5.2 nC @ 10 V
Width	3.7mm
Height	1.6mm
Minimum Operating Temperature	-55 °C

Quad N/P-Channel-Channel MOSFET, 1.8 A, 3.1 A, 30 V, 8-Pin SM Diodes Inc ZXMHC3A01T8TA

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.