DiodesZetex Type N-Channel MOSFET, 200 mA, 100 V Enhancement, 3-Pin TO-92 ZVN3310A
- RS Stock No.:
- 823-1820
- Mfr. Part No.:
- ZVN3310A
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
TWD264.00
(exc. GST)
TWD277.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 120 unit(s) shipping from March 02, 2026
- Plus 6,660 unit(s) shipping from March 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 980 | TWD13.20 | TWD264.00 |
| 1000 - 1980 | TWD12.80 | TWD256.00 |
| 2000 + | TWD12.40 | TWD248.00 |
*price indicative
- RS Stock No.:
- 823-1820
- Mfr. Part No.:
- ZVN3310A
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 625mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.01mm | |
| Length | 4.77mm | |
| Width | 2.41 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 625mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.01mm | ||
Length 4.77mm | ||
Width 2.41 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Related links
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