Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 Diodes Inc DMN65D8LDW-7

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Bulk discount available

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

TWD2.40

(exc. GST)

TWD2.52

(inc. GST)

82800 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
800 - 1400	TWD2.40
1500 +	TWD2.40

**price indicative

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	200 mA
Maximum Drain Source Voltage	60 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	8 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	20V
Maximum Power Dissipation	400 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.35mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Length	2.2mm
Typical Gate Charge @ Vgs	0.87 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1mm