DiodesZetex BSN20 N-Channel MOSFET, 500 mA, 50 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 822-2179P
- Mfr. Part No.:
- BSN20-7
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (800 units, supplied on a reel)*
TWD2,960.00
(exc. GST)
TWD3,104.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 900 unit(s) shipping from September 28, 2026
- Plus 3,000 unit(s) shipping from January 27, 2027
- Plus 3,000 unit(s) shipping from March 24, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 800 - 1400 | TWD3.70 |
| 1500 + | TWD3.60 |
*price indicative
- RS Stock No.:
- 822-2179P
- Mfr. Part No.:
- BSN20-7
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 500mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSN20 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Power Dissipation Pd | 920mW | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 500mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSN20 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Power Dissipation Pd 920mW | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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