Vishay SiHF9540S Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-263 SIHF9540STRL-GE3
- RS Stock No.:
- 815-2651
- Mfr. Part No.:
- SIHF9540STRL-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD742.00
(exc. GST)
TWD779.10
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 10, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | TWD74.20 | TWD742.00 |
| 200 - 390 | TWD72.30 | TWD723.00 |
| 400 + | TWD71.20 | TWD712.00 |
*price indicative
- RS Stock No.:
- 815-2651
- Mfr. Part No.:
- SIHF9540STRL-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | SiHF9540S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -5V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Width | 9.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series SiHF9540S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -5V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Width 9.65mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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