P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

RS Stock No.:: 812-3215P
Mfr. Part No.:: SI4431CDY-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

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Bulk discount available

Subtotal (32 reels of 20 units)**. Quantities below 150 on continuous strip

TWD11,776.00

(exc. GST)

TWD12,364.80

(inc. GST)

760 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit
640 - 1240	TWD17.90
1260 +	TWD17.60

**price indicative

RS Stock No.:: 812-3215P
Mfr. Part No.:: SI4431CDY-T1-GE3
Manufacturer:: Vishay

Si4431CDY, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	7.2 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	49 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	4.2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	4mm
Number of Elements per Chip	1
Length	5mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 7.2 A, 30 V, 8-Pin SOIC Vishay SI4431CDY-T1-GE3

FREE delivery for orders over TWD2,857.00 (ex VAT)

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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