Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET, 30 A, 30 V Enhancement, 8-Pin SOIC SI4164DY-T1-GE3
- RS Stock No.:
- 812-3198
- Mfr. Part No.:
- SI4164DY-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD407.00
(exc. GST)
TWD427.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 19, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | TWD40.70 | TWD407.00 |
| 630 + | TWD39.70 | TWD397.00 |
*price indicative
- RS Stock No.:
- 812-3198
- Mfr. Part No.:
- SI4164DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4164DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.72V | |
| Typical Gate Charge Qg @ Vgs | 26.5nC | |
| Maximum Power Dissipation Pd | 6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC JS709A, RoHS | |
| Height | 1.55mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4164DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.72V | ||
Typical Gate Charge Qg @ Vgs 26.5nC | ||
Maximum Power Dissipation Pd 6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC JS709A, RoHS | ||
Height 1.55mm | ||
Length 5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si4164DY Type N-Channel TrenchFET Power MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- Vishay Si9407BDY Type P-Channel TrenchFET Power MOSFET 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC SI4214DDY-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 8-Pin 1206-8 ChipFET SI5908BDC-T1-GE3
- Vishay TrenchFET Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC SI4124DY-T1-GE3