Vishay Si3433CDV Type P-Channel MOSFET, 6 A, 20 V Enhancement, 6-Pin TSOP SI3433CDV-T1-GE3
- RS Stock No.:
- 812-3142
- Mfr. Part No.:
- SI3433CDV-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
TWD340.00
(exc. GST)
TWD357.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,860 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 740 | TWD17.00 | TWD340.00 |
| 760 - 1480 | TWD16.50 | TWD330.00 |
| 1500 + | TWD16.40 | TWD328.00 |
*price indicative
- RS Stock No.:
- 812-3142
- Mfr. Part No.:
- SI3433CDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | Si3433CDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Forward Voltage Vf | -0.8V | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series Si3433CDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Forward Voltage Vf -0.8V | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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