Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

RS Stock No.:: 812-3108P
Mfr. Part No.:: SI1967DH-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available

Price Each (Supplied on a Reel)**. Quantities below 150 on continuous strip

TWD9.60

(exc. GST)

TWD10.08

(inc. GST)

Stock check temporarily unavailable - call for stock availability

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit
750 - 1450	TWD9.30
1500 +	TWD9.20

**price indicative

RS Stock No.:: 812-3108P
Mfr. Part No.:: SI1967DH-T1-GE3
Manufacturer:: Vishay

Si1967DH, Dual P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	790 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Transistor Material	Si
Typical Gate Charge @ Vgs	2.6 nC @ 8 V
Length	2.2mm
Maximum Operating Temperature	+150 °C
Width	1.35mm
Height	1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

FREE delivery for orders over TWD2,857.00 (ex VAT)

Dual P-Channel MOSFET, Vishay Semiconductor