Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

RS Stock No.:: 812-3108P
Mfr. Part No.:: SI1967DH-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

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Subtotal (15 reels of 50 units)**. Quantities below 150 on continuous strip

TWD7,800.00

(exc. GST)

TWD8,190.00

(inc. GST)

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Units	Per unit
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RS Stock No.:: 812-3108P
Mfr. Part No.:: SI1967DH-T1-GE3
Manufacturer:: Vishay

Si1967DH, Dual P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.1 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	790 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.25 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Length	2.2mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	2.6 nC @ 8 V
Transistor Material	Si
Width	1.35mm
Height	1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1967DH-T1-GE3

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Dual P-Channel MOSFET, Vishay Semiconductor

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