N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

RS Stock No.:: 802-4461P
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

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Bulk discount available

Price Each (Supplied in a Tube)**

TWD292.00

(exc. GST)

TWD306.60

(inc. GST)

58 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit
8 - 14	TWD285.00
15 +	TWD280.00

**price indicative

RS Stock No.:: 802-4461P
Mfr. Part No.:: IXFQ60N50P3
Manufacturer:: IXYS

IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3, Polar3 HiperFET, Power MOSFET, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	500 V
Package Type	TO-3P
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.9mm
Length	15.8mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	96 nC @ 10 V
Height	20.3mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 60 A, 500 V, 3-Pin TO-3PN IXYS IXFQ60N50P3

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series