N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

RS Stock No.:: 802-4394
Distrelec Article No.:: 302-53-342
Mfr. Part No.:: IXFK120N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

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Bulk discount available

Subtotal (1 unit)**

TWD507.00

(exc. GST)

TWD532.35

(inc. GST)

40 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit
1 - 6	TWD507.00
7 - 12	TWD494.00
13 +	TWD487.00

**price indicative

RS Stock No.:: 802-4394
Distrelec Article No.:: 302-53-342
Mfr. Part No.:: IXFK120N30P3
Manufacturer:: IXYS

IXFK120N30P3, IXFX120N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Package Type	TO-264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.13mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Length	19.96mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	26.16mm

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series