Toshiba DTMOSIV Type N-Channel MOSFET, 100 A, 600 V Enhancement, 3-Pin TO-3PL TK100L60W,VQ(O
- RS Stock No.:
- 799-4987
- Mfr. Part No.:
- TK100L60W,VQ(O
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
TWD730.00
(exc. GST)
TWD766.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 14 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 19 | TWD730.00 |
| 20 - 49 | TWD729.00 |
| 50 - 99 | TWD698.00 |
| 100 - 249 | TWD676.00 |
| 250 + | TWD671.00 |
*price indicative
- RS Stock No.:
- 799-4987
- Mfr. Part No.:
- TK100L60W,VQ(O
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-3PL | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 797W | |
| Typical Gate Charge Qg @ Vgs | 360nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 26mm | |
| Length | 20mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-3PL | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 797W | ||
Typical Gate Charge Qg @ Vgs 360nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 26mm | ||
Length 20mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VX(S