Nexperia Type N-Channel MOSFET, 76 A, 30 V Enhancement, 4-Pin SOT-669 PSMN7R0-30YL,115
- RS Stock No.:
- 798-3025
- Mfr. Part No.:
- PSMN7R0-30YL,115
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD123.00
(exc. GST)
TWD129.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 8,310 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 370 | TWD12.30 | TWD123.00 |
| 380 - 740 | TWD12.10 | TWD121.00 |
| 750 + | TWD11.90 | TWD119.00 |
*price indicative
- RS Stock No.:
- 798-3025
- Mfr. Part No.:
- PSMN7R0-30YL,115
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 51W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Width | 4.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 51W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 5mm | ||
Width 4.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
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