STMicroelectronics MDmesh Type N-Channel MOSFET, 2.5 A, 1500 V Enhancement, 3-Pin H2PAK
- RS Stock No.:
- 792-5861P
- Mfr. Part No.:
- STH3N150-2
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 250 units (supplied on a reel)*
TWD53,500.00
(exc. GST)
TWD56,175.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 934 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 498 | TWD214.00 |
| 500 + | TWD210.00 |
*price indicative
- RS Stock No.:
- 792-5861P
- Mfr. Part No.:
- STH3N150-2
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 1500V | |
| Package Type | H2PAK | |
| Series | MDmesh | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29.3nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.8mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 4.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 1500V | ||
Package Type H2PAK | ||
Series MDmesh | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29.3nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 15.8mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 4.8mm | ||
Automotive Standard No | ||
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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