Nexperia BSP126 Type N-Channel MOSFET, 375 mA, 250 V Enhancement, 4-Pin SOT-223 BSP126,115
- RS Stock No.:
- 792-0875
- Mfr. Part No.:
- BSP126,115
- Manufacturer:
- Nexperia
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 10 units)*
TWD133.00
(exc. GST)
TWD139.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 5,070 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 10 - 240 | TWD13.30 | TWD133.00 |
| 250 - 490 | TWD13.00 | TWD130.00 |
| 500 + | TWD12.80 | TWD128.00 |
*price indicative
- RS Stock No.:
- 792-0875
- Mfr. Part No.:
- BSP126,115
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 375mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-223 | |
| Series | BSP126 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Width | 3.7 mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 375mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-223 | ||
Series BSP126 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Width 3.7 mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia BSP126 Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Nexperia BSP89 Type N-Channel MOSFET 240 V Enhancement115
- DiodesZetex ZVN4525G Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- DiodesZetex ZVN4525G Type N-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 ZVN4525GTA
- DiodesZetex Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1