DiodesZetex DMN N-Channel MOSFET, 1.4 A, 12 V Enhancement, 3-Pin X1-DFN DMN1150UFB-7B
- RS Stock No.:
- 790-4583
- Mfr. Part No.:
- DMN1150UFB-7B
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
TWD380.00
(exc. GST)
TWD399.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 26, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 2450 | TWD7.60 | TWD380.00 |
| 2500 - 4950 | TWD7.40 | TWD370.00 |
| 5000 + | TWD7.30 | TWD365.00 |
*price indicative
- RS Stock No.:
- 790-4583
- Mfr. Part No.:
- DMN1150UFB-7B
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Forward Voltage Vf | 700mV | |
| Maximum Gate Source Voltage Vgs | -6V, +6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 480μm | |
| Length | 1.08mm | |
| Standards/Approvals | No | |
| Width | 680μm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Forward Voltage Vf 700mV | ||
Maximum Gate Source Voltage Vgs -6V, +6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Height 480μm | ||
Length 1.08mm | ||
Standards/Approvals No | ||
Width 680μm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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