Vishay SiR870ADP Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin SO-8 SIR870ADP-T1-GE3
- RS Stock No.:
- 787-9355
- Mfr. Part No.:
- SIR870ADP-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
TWD405.00
(exc. GST)
TWD425.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 4,735 unit(s) shipping from June 01, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 745 | TWD81.00 | TWD405.00 |
| 750 - 1495 | TWD78.60 | TWD393.00 |
| 1500 + | TWD77.80 | TWD389.00 |
*price indicative
- RS Stock No.:
- 787-9355
- Mfr. Part No.:
- SIR870ADP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SiR870ADP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53.5nC | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SiR870ADP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53.5nC | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Length 6.25mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiR870ADP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay Si7164DP Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SI7164DP-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Common Drain TrenchFET Gen IV 2 Type N-Channel Power MOSFET 25 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3