Nexperia Single Trench MOSFET 1 Type N-Channel MOSFET, 320 mA, 60 V Enhancement, 6-Pin SC-88 2N7002PS,115
- RS Stock No.:
- 781-6708
- Mfr. Part No.:
- 2N7002PS,115
- Manufacturer:
- Nexperia
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Bulk discount available
Subtotal (1 pack of 50 units)*
TWD185.00
(exc. GST)
TWD194.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from August 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 700 | TWD3.70 | TWD185.00 |
| 750 - 1450 | TWD3.60 | TWD180.00 |
| 1500 + | TWD3.60 | TWD180.00 |
*price indicative
- RS Stock No.:
- 781-6708
- Mfr. Part No.:
- 2N7002PS,115
- Manufacturer:
- Nexperia
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 320mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 420mW | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 320mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 420mW | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
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