onsemi NTGS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 6-Pin TSOP NTGS5120PT1G
- RS Stock No.:
- 780-0579
- Mfr. Part No.:
- NTGS5120PT1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 25 units)*
TWD292.50
(exc. GST)
TWD307.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 5,350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 725 | TWD11.70 | TWD292.50 |
| 750 - 1475 | TWD11.30 | TWD282.50 |
| 1500 + | TWD11.20 | TWD280.00 |
*price indicative
- RS Stock No.:
- 780-0579
- Mfr. Part No.:
- NTGS5120PT1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTGS | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 142mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 18.1nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTGS | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 142mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 18.1nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
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