onsemi PowerTrench Type N-Channel MOSFET, 6.3 A, 30 V Enhancement, 6-Pin SSOT FDC655BN
- RS Stock No.:
- 761-4426
- Mfr. Part No.:
- FDC655BN
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD60.00
(exc. GST)
TWD63.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,820 unit(s) shipping from January 05, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | TWD6.00 | TWD60.00 |
| 750 - 1490 | TWD5.90 | TWD59.00 |
| 1500 + | TWD5.80 | TWD58.00 |
*price indicative
- RS Stock No.:
- 761-4426
- Mfr. Part No.:
- FDC655BN
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 6-Pin SSOT FDC645N
- onsemi Isolated PowerTrench 2 Type P 3 A 6-Pin SSOT
- onsemi Isolated PowerTrench 2 Type P 3 A 6-Pin SSOT FDC6420C
- onsemi PowerTrench Type N-Channel MOSFET 40 V Enhancement, 6-Pin MLP
- onsemi PowerTrench Type N-Channel MOSFET 20 V Enhancement, 6-Pin MLP
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 6-Pin SOT-23