STMicroelectronics MDmesh N-Channel MDmesh II Power MOSFET, 17 A, 500 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 761-0663P
- Mfr. Part No.:
- STB23NM50N
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal 250 units (supplied on a reel)*
TWD49,750.00
(exc. GST)
TWD52,237.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 990 unit(s) shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 499 | TWD199.00 |
| 500 + | TWD196.00 |
*price indicative
- RS Stock No.:
- 761-0663P
- Mfr. Part No.:
- STB23NM50N
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MDmesh II Power MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | MDmesh | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.75mm | |
| Width | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MDmesh II Power MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series MDmesh | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 10.75mm | ||
Width 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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