STMicroelectronics Single FDmesh 1 N-Channel MOSFET, 51 A, 600 V Enhancement, 3-Pin TO-247 STW55NM60ND
- RS Stock No.:
- 761-0336P
- Mfr. Part No.:
- STW55NM60ND
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 761-0336P
- Mfr. Part No.:
- STW55NM60ND
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Transistor Configuration | Single | |
| Series | FDmesh | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 51 A | |
| Maximum Drain Source Voltage (Vds) | 600 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-247 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.3 V | |
| Height | 20.15 mm | |
| Length | 15.75 mm | |
| Maximum Drain Source Resistance (Rds) | 60 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -25 V, +25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 350 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 190 nC | |
| Width | 5.15 mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Transistor Configuration Single | ||
Series FDmesh | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 51 A | ||
Maximum Drain Source Voltage (Vds) 600 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-247 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.3 V | ||
Height 20.15 mm | ||
Length 15.75 mm | ||
Maximum Drain Source Resistance (Rds) 60 mΩ | ||
Maximum Gate Source Voltage (Vgs) -25 V, +25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 350 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 190 nC | ||
Width 5.15 mm | ||
N-Channel FDmesh™ Power MOSFET, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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