STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 5.2 A, 800 V Enhancement, 3-Pin TO-263 STB7NK80ZT4
- RS Stock No.:
- 760-9516
- Mfr. Part No.:
- STB7NK80ZT4
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
TWD452.00
(exc. GST)
TWD474.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 50 unit(s) ready to ship from another location
- Plus 285 unit(s) shipping from February 09, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 245 | TWD90.40 | TWD452.00 |
| 250 - 495 | TWD88.40 | TWD442.00 |
| 500 + | TWD86.80 | TWD434.00 |
*price indicative
- RS Stock No.:
- 760-9516
- Mfr. Part No.:
- STB7NK80ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.75mm | |
| Width | 10.4 mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series MDmesh, SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.75mm | ||
Width 10.4 mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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