onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 3.8 A, 20 V Enhancement, 6-Pin MicroFET FDME1034CZT
- RS Stock No.:
- 759-9147
- Mfr. Part No.:
- FDME1034CZT
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
TWD185.00
(exc. GST)
TWD194.25
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 5,000 unit(s) shipping from April 07, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 1245 | TWD37.00 | TWD185.00 |
| 1250 - 2495 | TWD36.20 | TWD181.00 |
| 2500 + | TWD35.40 | TWD177.00 |
*price indicative
- RS Stock No.:
- 759-9147
- Mfr. Part No.:
- FDME1034CZT
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | MicroFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 700mV | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Typical Gate Charge Qg @ Vgs | 3nC | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.6mm | |
| Length | 1.6mm | |
| Height | 500μm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type MicroFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 700mV | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Typical Gate Charge Qg @ Vgs 3nC | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.6mm | ||
Length 1.6mm | ||
Height 500μm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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