onsemi UniFET Type N-Channel MOSFET, 28 A, 300 V Enhancement, 3-Pin TO-263 FDB28N30TM
- RS Stock No.:
- 759-8970
- Mfr. Part No.:
- FDB28N30TM
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD125.00
(exc. GST)
TWD131.24
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 760 unit(s) shipping from June 12, 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 198 | TWD62.50 | TWD125.00 |
| 200 - 398 | TWD61.00 | TWD122.00 |
| 400 + | TWD59.50 | TWD119.00 |
*price indicative
- RS Stock No.:
- 759-8970
- Mfr. Part No.:
- FDB28N30TM
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Series | UniFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 129mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 300V | ||
Series UniFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 129mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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