N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 Infineon IPW60R190C6FKSA1
- RS Stock No.:
- 753-3074
- Mfr. Part No.:
- IPW60R190C6FKSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 06/05/2025, delivery within 6 working days
Added
Price (VAT excluded) Each
TWD139.00
(exc. GST)
TWD145.95
(inc. GST)
| Units | Per unit |
| 1 - 7 | TWD139.00 |
| 8 - 14 | TWD135.00 |
| 15 + | TWD126.00 |
- RS Stock No.:
- 753-3074
- Mfr. Part No.:
- IPW60R190C6FKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon CoolMOS™C6/C7 Power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 650 V |
| Series | CoolMOS C6 |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 190 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 151 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Length | 16.13mm |
| Maximum Operating Temperature | +150 °C |
| Width | 5.21mm |
| Minimum Operating Temperature | -55 °C |
| Height | 21.1mm |