Infineon CoolMOS C6 N-Channel MOSFET, 10.6 A, 650 V Enhancement, 3-Pin TO-252 IPD60R380C6ATMA1
- RS Stock No.:
- 753-3011
- Mfr. Part No.:
- IPD60R380C6ATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
TWD143.00
(exc. GST)
TWD150.16
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from January 11, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 624 | TWD71.50 | TWD143.00 |
| 626 - 1248 | TWD70.00 | TWD140.00 |
| 1250 + | TWD69.50 | TWD139.00 |
*price indicative
- RS Stock No.:
- 753-3011
- Mfr. Part No.:
- IPD60R380C6ATMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C6 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C6 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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