Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1
- RS Stock No.:
- 753-2848
- Mfr. Part No.:
- BSS192PH6327FTSA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 10 units)*
TWD205.00
(exc. GST)
TWD215.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 760 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 240 | TWD20.50 | TWD205.00 |
| 250 - 490 | TWD20.00 | TWD200.00 |
| 500 + | TWD18.80 | TWD188.00 |
*price indicative
- RS Stock No.:
- 753-2848
- Mfr. Part No.:
- BSS192PH6327FTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | SIPMOS | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series SIPMOS | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 4.5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS192PH6327FTSA1
Features and Benefits:
• 190mA continuous drain current supports low‑current load control
• 20Ω maximum Rds reduces conduction loss in low‑current circuits
• 4.9nC typical gate charge at Vgs ensures predictable switching behaviour
• 20V gate‑source limit allows straightforward gate drive designs
• 1W maximum power dissipation manages thermal constraints in compact layouts
Applications
• Ideal for low‑power reverse polarity protection circuits
• Used with high‑voltage battery management subsystems
• Can be used for small relay replacement in control modules
• Appropriate for surface‑mount power distribution on compact boards
What thermal range can it tolerate in harsh conditions?
How many pins does the package present for PCB layout?
Which package style should designers expect for assembly?
Is the device rated for automotive qualification standards?
Related links
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223
