N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 Infineon BSP129H6327XTSA1

RS Stock No.:: 753-2800
Mfr. Part No.:: BSP129H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 Infineon BSP129H6327XTSA1

Price Each (In a Pack of 5)**

TWD15.80

(exc. GST)

TWD16.59

(inc. GST)

80 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Pack**
5 +	TWD15.80	TWD79.00

**price indicative

RS Stock No.:: 753-2800
Mfr. Part No.:: BSP129H6327XTSA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Voltage	240 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	3.8 nC @ 5 V
Maximum Operating Temperature	+150 °C
Width	3.5mm
Transistor Material	Si
Length	6.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm

N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 Infineon BSP129H6327XTSA1

FREE delivery for orders over TWD2,857.00 (ex VAT)

Infineon SIPMOS® N-Channel MOSFETs