DiodesZetex DMG Type P-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC DMG4413LSS-13
- RS Stock No.:
- 751-4102
- Mfr. Part No.:
- DMG4413LSS-13
- Manufacturer:
- DiodesZetex
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 10 units)*
TWD250.00
(exc. GST)
TWD262.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 1,580 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | TWD25.00 | TWD250.00 |
| 630 - 1240 | TWD24.50 | TWD245.00 |
| 1250 + | TWD24.00 | TWD240.00 |
*price indicative
- RS Stock No.:
- 751-4102
- Mfr. Part No.:
- DMG4413LSS-13
- Manufacturer:
- DiodesZetex
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | DMG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.95 mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series DMG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.95 mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 4.95mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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